MMBTA55 (100-400)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC(T MMBTA55 TRANSISTOR (PNP) SOT–23 FEATURES  Driver Transistors MARKING:2H 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 2. EMITTER Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -4 V IC Collector Current -500 mA PC Collector Power Dissipation 225 mW Thermal Resistance From Junction To Ambient 556 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -60 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -4 V Collector cut-off current ICBO VCB=-60V, IE=0 -0.1 µA Collector cut-off current ICEO VCE=-60V, IB=0 -0.1 µA hFE(1) VCE=-1V, IC=-10mA 100 hFE(2) VCE=-1V, IC=-100mA 100 DC current gain Collector-emitter saturation voltage VCE(sat) Base-emitter voltage VBE Transition frequency fT www.cj-elec.com 400 IC=-100mA, IB=-10mA -0.25 V VCE=-1V, IC=-100mA -1.2 V VCE=-1V,IC=-100mA, f=100MHz 1 50 MHz B,Oct,2014 A,Jun,2014 SOT-23 Package Outline Dimensions Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° SOT-23 Suggested Pad Layout www.cj-elec.com 2 B,Oct,2014 A,Jun,2014 SOT-23 Tape and Reel www.cj-elec.com 3 B,Oct,2014 A,Jun,2014